| PART |
Description |
Maker |
| M6MGT647M34CKT M6MGB647M34CKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| DS42587 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| SDA356JUF SDA276B SDA276C SDA276D SDA276E SDA276G |
600 V, 1 A fast and ultra fast rectifier assembly
100 V, 1.5 A bridge rectifier assembly
200 V, 1.5 A bridge rectifier assembly
400 V, 1.5 A bridge rectifier assembly
600 V, 1.5 A bridge rectifier assembly
1000 V, 1.5 A bridge rectifier assembly
1500 V, 1.5 A bridge rectifier assembly
800 V, 1 A fast and ultra fast rectifier assembly
1200 V, 1 A fast and ultra fast rectifier assembly
400 V, 1 A fast and ultra fast rectifier assembly
|
Solid State Devices Inc
|
| MB84VD2118XEM-70 MB84VD2119XEM-70 |
2-Stacked MCP
|
Fujitsu
|
| KBY00U00VA-B450 |
MCP Specification
|
Samsung semiconductor
|
| 1896941 1908871 1827428 1879285 1833027 |
FK-MCP 1,5/ 2-STF-3,81
|
PHOENIX CONTACT
|
| K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5 |
MCP MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| WS512K32BV-XG2XE WS512K32NBV-XH2XE |
SRAM MCP SRAM的MCP
|
IDEC, Corp.
|
| WF4M32-XH2X5 WF4M32-XG2TX5 WF4M32-XG4TX5 |
Flash MCP 闪存MCP
|
OKI SEMICONDUCTOR CO., LTD.
|
